BFS25A,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A FEATURES PINNING Low current consumption PIN DESCRIPTION Low noise figure Code: N6 Gold metallization ensures 3 1 base handbook, 2 columns excellent reliability 2emitter SOT323 envelope. 3 collector DESCRIPTION 12 Top view MBC870 NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket Fig.1 SOT323. phones with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 8V CBO V collector-emitter voltage open base 5V CEO I DC collector current 6.5 mA C P total power dissipation up to T =170 C note 1 32 mW tot s h DC current gain I = 0.5 mA V =1 V T =25 C50 80 200 FE C CE j f transition frequency I = 1 mA V =1 V f= 1 GHz 3.5 5 GHz T C CE T =25 C amb G maximum unilateral power gain I = 0.5 mA V =1 V f =1 GHz 13 dB UM c CE T =25 C amb F noise figure I = 0.5 mA V =1 V f= 1 GHz 1.8 dB c CE T =25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 8V CBO V collector-emitter voltage open base 5V CEO V emitter-base voltage open collector 2V EBO I DC collector current 6.5 mA C P total power dissipation up to T =170 C note 1 32 mW tot s T storage temperature 65 +150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s December 1997 2