BFS505,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 FEATURES PINNING Low current consumption PIN DESCRIPTION 3 handbook, 2 columns High power gain Code: N0 Low noise figure 1 base High transition frequency 2emitter Gold metallization ensures 3 collector 12 excellent reliability Top view MBC870 SOT323 envelope. Fig.1 SOT323. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE I DC collector current 18 mA C P total power dissipation up to T =147 C note 1 150 mW tot s h DC current gain I = 5 mA V =6 V T =25 C 60 120 250 FE C CE j f transition frequency I = 5 mA V =6 V f= 1 GHz 9 GHz T C CE T =25 C amb G maximum unilateral power gain I = 5 mA V = 6 V f = 900 MHz 17 dB UM c CE T =25 C amb F noise figure I =1.25 mA V =6 V 1.2 1.7 dB c CE f = 900 MHz T =25 C amb Note 1. T is the temperature at the soldering point of the collector tab. s September 1995 2