BFS520,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFS520 NPN 9 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 FEATURES It is intended for wideband applications such as satellite TV High power gain tuners, cellular phones, cordless 3 handbook, 2 columns Low noise figure phones, pagers etc., with signal frequencies up to 2 GHz. High transition frequency Gold metallization ensures excellent reliability PINNING SOT323 envelope. PIN DESCRIPTION 12 Code: N2 DESCRIPTION Top view MBC870 1 base NPN transistor in a plastic SOT323 2emitter Fig.1 SOT323. envelope. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE I DC collector current 70 mA C P total power dissipation up to T =118 C note 1 300 mW tot s h DC current gain I =20 mA V =6 V T = 25 C60 120 250 FE C CE j f transition frequency I =20 mA V =6 V f =1 GHz 9 GHz T C CE T =25 C amb G maximum unilateral power gain I =20 mA V = 6 V f = 900 MHz 15 dB UM c CE T =25 C amb F noise figure I =5 mA V = 6 V f = 900 MHz 1.1 1.6 dB c CE T =25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE V emitter-base voltage open collector 2.5 V EBO I DC collector current 70 mA C P total power dissipation up to T =118 C note 1 300 mW tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s September 1995 2