Product Information

BFT46

BFT46 electronic component of NXP

Datasheet
RF JFET Transistors N-channel FET
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.6519 ea
Line Total: USD 3.26

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 100
Multiples : 1

Stock Image

BFT46
NXP

100 : USD 0.4688
500 : USD 0.3534
1000 : USD 0.2924
5000 : USD 0.2613

Read More Specifications

     
Manufacturer
Product Category
Transistor Type
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Packaging
Breakdown Voltage Vbr
Zero Gate Voltage Drain Current Idss Min
Zero Gate Voltage Drain Current Idss Max
Gate-Source Cutoff Voltage Vgsoff Max
Transistor Case Style
No Of Pins
Msl
Svhc
Application Code
Current Idss Max
Current Idss Min
Current Ig
Full Power Rating Temperature
No Of Transistors
Power Dissipation Ptot Max
Smd Marking
Termination Type
Zero Gate Voltage Drain Current Idss
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3 handbook, halfpage amplifiers in thick and thin-film circuits. d g s PINNING 12 1 = drain Top view MAM385 2 = source 3= gate Note : Drain and source are Fig.1 Simplified outline and symbol, SOT23. interchangeable. Marking code BFT46 = M3p QUICK REFERENCE DATA Drain-source voltage V max. 25 V DS Gate-source voltage (open drain) V max. 25 V GSO Total power dissipation up to T =40 CP max. 250 mW amb tot Drain current V =10V V =0 0,2 mA DS GS I DSS 1,5 mA Transfer admittance (common source) I = 0,2 mA V = 10 V f = 1 kHz y 0,5 mS D DS fs Equivalent noise voltage V =10 V I =200 A B = 0,6 to 100 Hz V 0,5 V DS D n December 1997 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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