BFU550W 7 2 6 NPN wideband silicon RF transistor Rev. 1 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package. The BFU550W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.6 dB at 900 MHz min Maximum stable gain 18 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit collector-base voltage open emitter - - 24 V V CB collector-emitter voltage open base - - 12 V V CE shorted base - - 24 V emitter-base voltage open collector - - 2 V V EB collector current - 15 50 mA I C 1 total power dissipation T 87 C -- 450 mW P tot sp DC current gain I =15 mA V =8V 60 95 200 h FE C CE collector capacitance V =8V f = 1MHz - 0.74 - pF C c CB transition frequency I =25 mA V = 8 V f = 900 MHz - 11 - GHz f T C CEBFU550W NXP Semiconductors NPN wideband silicon RF transistor Table 1. Quick reference data continued T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I =15 mA V = 8 V f = 900 MHz -18 - dB p(max) C CE NF minimum noise figure I =1 mA V = 8 V f = 900 MHz = -0.6 - dB min C CE S opt P output power at 1 dB gain I =25 mA V =8V Z =Z =50 - 13.5 - dBm L(1dB) C CE S L compression f=900MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1base 2emitter 3 collector DDD 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU550W - plastic surface-mounted package 3 leads SOT323 1 - OM7960 - Customer evaluation kit for BFU520W, BFU530W and BFU550W 1 The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU520W, BFU530W and BFU550W samples e) USB stick with data sheets, application notes, models, S-parameter and noise files 4. Marking Table 4. Marking Type number Marking Description BFU550W ZC* * = t : made in Malaysia * = w : made in China BFU550W All information provided in this document is subject to legal disclaimers. NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 13 January 2014 2 of 22