BGA2869,115 NXP

BGA2869 MMIC wideband amplifier Rev. 3 10 July 2015 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits Internally matched to 50 A gain of 31.7 dB at 950 MHz Output power at 1 dB gain compression = 10 dBm at 950 MHz Supply current = 24.0 mA at a supply voltage of 5.0 V Reverse isolation > 39 dB up to 2150 MHz Good linearity with low second order and third order products Noise figure = 3.1 dB at 950 MHz Unconditionally stable (K > 1) No output inductor required 1.3 Applications LNB IF amplifiers General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol 1V CC 6 5 4 1 2, 5 GND2 6 3 3RF OUT 4 GND1 4 2, 5 132 6RF IN sym052BGA2869 NXP Semiconductors MMIC wideband amplifier 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BGA2869 - plastic surface-mounted package 6 leads SOT363 4. Marking Table 3. Marking Type number Marking code Description BGA2869 MD* * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V supply voltage RF input AC coupled 0.5 +7.0 V CC I supply current - 36 mA CC P total power dissipation T = 90 C-200mW tot sp T storage temperature 40 +125 C stg T junction temperature - 125 C j P drive power - +10 dBm drive 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to P = 200 mW T =90 C 300 K/W th(j-sp) tot sp solder point 7. Characteristics Table 6. Characteristics V = 5.0 V Z = Z = 50 P = 34 dBm T = 25 C measured on demo board unless otherwise specified. CC S L i amb Symbol Parameter Conditions Min Typ Max Unit V supply voltage 4.5 5.0 5.5 V CC I supply current 21.8 24.0 26.0 mA CC BGA2869 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 3 10 July 2015 2 of 13