BLF546 UHF push-pull power MOS transistor Rev. 4 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication UHF push-pull power MOS transistor BLF546 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability handbook, halfpage 1 4 d Designed for broadband operation. g s g 5 DESCRIPTION d 2 3 Silicon N-channel enhancement Top view MAM395 mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 4-lead, SOT268A balanced flange package, with two ceramic caps. The CAUTION mounting flange provides the This product is supplied in anti-static packing to prevent damage caused by common source connection for the electrostatic discharge during transport and handling. For further information, transistors. refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PINNING - SOT268A WARNING PIN DESCRIPTION Product and environmental safety - toxic materials 1 drain 1 This product contains beryllium oxide. The product is entirely safe provided 2 gate 1 that the BeO discs are not damaged. All persons who handle, use or dispose 3 gate 2 of this product should be aware of its nature and of the necessary safety 4 drain 2 precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown 5 source out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T =25 C in a push-pull common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-B 500 28 80 >11 >50 2003 Sep 22 2