Product Information

BLF369,112

BLF369,112 electronic component of NXP

Datasheet
RF MOSFET Transistors RF LDMOS 65V 100A
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

45: USD 365.625 ea
Line Total: USD 16453.12

0 - Global Stock
MOQ: 45  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 45
Multiples : 1
45 : USD 365.625

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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Additional Infomation About Product

BLF369 Multi-use VHF power LDMOS transistor Rev. 5 1 September 2015 Product data sheet 1. Product profile 1.1 General description A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz. Table 1. Typical performance 1 Typical RF performance at V = 32 V and T = 25 C in a common-source 225 MHz test circuit. DS h Mode of operation f P P G IMD3 L L(PEP) p D (MHz) (W) (W) (dB) (%) (dBc) CW, class AB 225 500 - 18 60 - 2-tone, class AB f = 225 f = 225.1 - 500 19 47 28 1 2 2 pulsed, class AB 225 500 - 19 55 - 1 T is the heatsink temperature. h 2 t = 2 ms = 10 %. p CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical pulsed performance at 225 MHz, a drain-source voltage V of 32 V and a DS quiescent drain current I = 2 1.0 A: Dq Load power P = 500 W L Power gain G = 19 dB p Drain efficiency = 55 % D Advanced flange material for optimum thermal behavior and reliability Excellent ruggedness High power gain Designed for broadband operation (HF/VHF band) Source on underside eliminates DC isolators, reducing common-mode inductance Easy power control Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS), using exemption No. 7 of the annexBLF369 Multi-use VHF power LDMOS transistor 1.3 Applications Pulsed applications up to 500 MHz Communication transmitter applications in the HF/VHF/UHF band under specific conditions Industrial applications up to 500 MHz under special conditions 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain1 12 1 2 drain2 3 gate1 5 3 4 gate2 5 4 1 3 4 5 source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF369 - flanged LDMOST ceramic package 2 mounting holes SOT800-2 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF369 5 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 1 September 2015 2 of 18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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