BLF2045 UHF power LDMOS transistor Rev. 7 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication UHF power LDMOS transistor BLF2045 FEATURES PINNING Typical 2-tone performance at a supply voltage of 26 V PIN DESCRIPTION and I of 500 mA DQ 1 drain Output power = 30 W (PEP) 2 gate Gain = 12.5 dB 3 source, connected to ange Efficiency = 32% d = - 26 dBc. im Easy power control Excellent ruggedness High power gain 1 Excellent thermal stability Designed for broadband operation (1800 to 2200 MHz) No internal matching for broadband operation. 3 2 APPLICATIONS Top view MBK584 RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the 1800 to 2200 MHz frequency range Broadcast drivers. DESCRIPTION 30 W LDMOS power transistor for base station Fig.1 Simplified outline. applications at frequencies from 1800 to 2200 MHz. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BLF2045 - plastic surface mounted package 3 leads SOT467C QUICK REFERENCE DATA RF performance at T =25 C in a common source test circuit. h MODE OF OPERATION f (MHz) V (V) P (W) G (dB) (%) d (dBc) DS L p D im 2-tone, class-AB f = 2000 f = 2000.1 26 30 (PEP) >10 >30 - 25 1 2 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2004 Feb 11 2