Product Information

BLF573S,112

BLF573S,112 electronic component of NXP

Datasheet
RF MOSFET Transistors Trans MOSFET N-CH 110V 42A 3-Pin
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 118.8837 ea
Line Total: USD 118.88

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 118.8837
2 : USD 115.4088
3 : USD 113.5836
5 : USD 112.086

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

BLF573 BLF573S HF / VHF power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I of 900 mA: Dq Average output power = 300 W Power gain = 27.2 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF and VHF band) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF573 BLF573S HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF573 (SOT502A) 1drain 1 1 2gate 3 1 3source 2 2 3 sym112 BLF573S (SOT502B) 1drain 1 1 2gate 3 1 3source 2 2 3 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF573 - flanged LDMOST ceramic package 2 mounting holes 2 leads SOT502A BLF573S - earless flanged LDMOST ceramic package, 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 110 V DS V gate-source voltage 0.5 +11 V GS I drain current - 42 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 R thermal resistance from T =80 C P = 300 W 0.21 K/W th(j-c) case L junction to case 1 R is measured under RF conditions. th(j-c) BLF573 BLF573S 4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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