BTA420-800BT,127 NXP

BTA420-800BT 3Q Hi-Com Triac 11 March 2020 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries B triac will commutate the full RMS current at the maximum rated junction temperature (T = 150 C) without the aid of a snubber. It is used in applications wherehigh junction j(max) operating temperature capabilit is required. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High junction operating temperature capability High voltage capability Least sensitive gate for highest noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications Applications subject to high temperature Heating controls High power motor control High power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak off-state 800 V DRM voltage I RMS on-state current full sine wave T 122 C 20 A T(RMS) mb Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave t = 20 ms T = 25 C 200 A TSM p j(init) state current Fig. 4 Fig. 5 full sine wave t = 16.7 ms T = 25 C 220 A p j(init) T junction temperature 150 C jWeEn Semiconductors BTA420-800BT 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 50 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 40 mA H D j V on-state voltage I = 24 A T = 25 C Fig. 10 - 1.2 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 150 C (V = 67% 1800 - - V/s D DM j DM voltage of V ) exponential waveform DRM gate open circuit dI /dt rate of change of V = 400 V T = 150 C I = 20 A 25 - - A/ms com D j T(RMS) commutating current dV /dt = 10 V/s gate open circuit com V = 400 V T = 150 C I = 20 A 65 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 12 3 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package name method quantity version issue date BTA420-800BT TO-220 BTA420-800BT Tube 50 SOT78 8-Jun-2013 7. Marking Table 4. Marking codes Type number Marking codes BTA420-800BT BTA420-800BT BTA420-800BT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2020. All rights reserved Product data sheet 11 March 2020 2 / 12