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BUK664R4-55C,118

BUK664R4-55C,118 electronic component of Nexperia
Part No.BUK664R4-55C,118
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-CHAN 55V 100A
Datasheet: BUK664R4-55C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 800
Multiples : 800
800 : USD 0.9713
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 2.1103
10 : USD 1.8679
100 : USD 1.4765
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 3.8721
10 : USD 1.4045
25 : USD 1.2814
100 : USD 1.1076
500 : USD 0.9471
800 : USD 0.809
2400 : USD 0.809
4800 : USD 0.7956
N/A

Obsolete
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 03 21 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V and 24 V automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage 1 I drain current V =10V T =25C --100A D GS mb see Figure 1 P total power T = 25 C see Figure 2 --204W tot mb dissipation Static characteristics R drain-source V =5V I =15A T =25C -11.113 m DSon GS D j on-state resistance see Figure 13 V =10V I =25A T =25C -4.2 4.9 m GS D j see Figure 14BUK664R4-55C Nexperia N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =100 A V 55 V --263mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T =25C j(init) Dynamic characteristics Q gate-drain charge I =25A V =44V V =10V -31.5-nC GD D DS GS see Figure 18 see Figure 17 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK664R4-55C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK664R4-55C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 21 December 2010 2 of 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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