BUK6610-75C NXP

BUK6610-75C electronic component of NXP
BUK6610-75C NXP
BUK6610-75C MOSFETs
BUK6610-75C  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK6610-75C MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK6610-75C MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK6610-75C
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 75V 75A Automotive 3-Pin(2+Tab) D2PAK
Datasheet: BUK6610-75C Datasheet (PDF)
Price (USD)
10: USD 3.5417 ea
Line Total: USD 35.42 
Availability : 0
  
QtyUnit Price
10$ 3.5417
   
Manufacturer
Product Category
Transistor Polarity
Mounting Style
Channel Mode
Id Continuous Drain Current
Pd Power Dissipation
Gate Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK6610-75C from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK6610-75C and other electronic components in the MOSFETs category and beyond.

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Trans MOSFET N-CH 30V 120A Automotive 3-Pin(2+Tab) D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET N-CH 30V 120A Automotive 3-Pin(2+Tab) D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Image Part-Description
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Trans MOSFET N-CH 30V 120A Automotive 3-Pin(2+Tab) D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET N-CH 30V 100A Automotive 3-Pin(2+Tab) D2PAK
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BUK6610-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power EngineMotors, lamps and solenoid switching control management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --75 V DS j j I drain current V =10V T =25C --78 A D GS mb see Figure 1 P total power dissipation T = 25 C see Figure 2 --158W tot mb Static characteristics R drain-source on-state V =10V I =25A -8.6 10 m DSon GS D resistance T =25C see Figure 11 jBUK6610-75C NXP Semiconductors N-channel TrenchMOS FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =78A V 75 V --121mJ DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =60V -30 - nC GD D DS V = 10 V see Figure 13 GS see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6610-75C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK6610-75C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 14 October 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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