X-On Electronics has gained recognition as a prominent supplier of BUK664R8-75C,118 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK664R8-75C,118 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK664R8-75C,118 NXP

BUK664R8-75C,118 electronic component of NXP
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Part No.BUK664R8-75C,118
Manufacturer: NXP
Category:MOSFET
Description: Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet: BUK664R8-75C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 3.7748 ea
Line Total: USD 37.75

Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
     
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Continuous Drain Current
Gate Source Voltage Max
Power Dissipation
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Type
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Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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BUK664R8-75C N-channel TrenchMOS FET Rev. 2 17 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V, 24 V and 42 V Automotive Start-Stop micro-hybrid applications systems Transmission control Electric and electro-hydraulic power Ultra high performance power steering switching Motors, lamps and solenoid control 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage 1 I drain current V =10V T =25C --120A D GS mb see Figure 1 P total power T = 25 C see Figure 2 --263W tot mb dissipation Static characteristics R drain-source V =10V I =25A -4.3 5 m DSon GS D on-state T =25C see Figure 11 j resistanceBUK664R8-75C Nexperia N-channel TrenchMOS FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =120 A V 75 V --329mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =60V -46.7-nC GD D DS V = 10 V see Figure 13 GS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2D Drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK664R8-75C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK664R8-75C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 17 November 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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