X-On Electronics has gained recognition as a prominent supplier of BUK663R7-75C,118 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK663R7-75C,118 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK663R7-75C,118 NXP

BUK663R7-75C,118 electronic component of NXP
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Part No.BUK663R7-75C,118
Manufacturer: NXP
Category:MOSFET
Description: MOSFET N-CHAN 75V 120A
Datasheet: BUK663R7-75C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 1.1745 ea
Line Total: USD 939.6

Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 800
Multiples : 800
800 : USD 1.1745

   
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Transistor Polarity
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Id Continuous Drain Current
Pd Power Dissipation
Rds On Drain Source Resistance
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Vds Drain Source Breakdown Voltage
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BUK663R7-75C N-channel TrenchMOS FET Rev. 2 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage 1 I drain current V =10V T =25C --120A D GS mb see Figure 1 P total power T = 25 C see Figure 2 --306W tot mb dissipation Static characteristics R drain-source V =10V I =25A -3.4 4 m DSon GS D on-state T =25C see Figure 11 j resistance see Figure 12 Avalanche ruggedness E non-repetitive I =120 A V 75 V --523mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) 1 Continuous current is limited by package.BUK663R7-75C NXP Semiconductors N-channel TrenchMOS FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK663R7-75C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK663R7-75C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 15 September 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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