X-On Electronics has gained recognition as a prominent supplier of BUK6C2R1-55C mosfet across the USA, India, Europe, Australia, and various other global locations. BUK6C2R1-55C mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK6C2R1-55C

BUK6C2R1-55C electronic component of NXP
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See Product Specifications
Part No.BUK6C2R1-55C
Manufacturer: NXP
Category:MOSFET
Description: MOSFET, N CH, 55V, 228A, D2PAK
Datasheet: BUK6C2R1-55C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.8314 ea
Line Total: USD 2.83

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 2.8314
25 : USD 2.6442
100 : USD 2.4414
250 : USD 2.2854
500 : USD 2.1372

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rds On
Rds On Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard and logic level gate drive sources High current handling capability, up to 320 A Suitable for thermally demanding environments due to 175 C rating Low conduction losses due to very low on-state resistance 1.3 Applications 12 V automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoids switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --55 V DS j j I drain current V =10V T =25C - - 228 A D GS mb see Figure 1 total power dissipation T = 25 C see Figure 2 - - 300 W P tot mb Static characteristics drain-source on-state V =10V I =90A -1.9 2.3 m R DSon GS D resistance T =25C j see Figure 11 D2PAKBUK6C2R1-55C NXP Semiconductors N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge I =180 A V =44V -79 -nC GD D DS V =10V GS see Figure 13 see Figure 14 Avalanche ruggedness E non-repetitive I =120 A V 55 V - - 770 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2S source 3S source G 1 4 D drain mbb076 S 5S source 4 6S source 1 2 3 5 6 7 7S source SOT427 (D2PAK) mb D mounting base connected to drain 1 It is not possible to connect to pin 4 of the SOT427 package. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6C2R1-55C D2PAK plastic single-ended surface-mounted package (D2PAK) 7 leads SOT427 (one lead cropped) BUK6C2R1-55C All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 18 January 2012 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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