Product Information

BYC8D-600,127

BYC8D-600,127 electronic component of NXP

Datasheet
Rectifiers PWR 600 V 8 A
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2969 ea
Line Total: USD 1.3

3217 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3095 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8936
10 : USD 0.736
100 : USD 0.5463
500 : USD 0.4646
1000 : USD 0.4071
2000 : USD 0.3657
5000 : USD 0.3519
10000 : USD 0.3289
25000 : USD 0.3289

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

BYC8D-600 Hyperfast power diode 16 September 2018 Product data sheet 1. General description Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits Low reverse recovery current and low thermal resistance Reduces switching losses in associated MOSFET 3. Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies Half-bridge lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 600 V R I average forward = 0.5 T 103 C SQW Fig. 1 - - 8 A F(AV) mb current Fig. 2 I repetitive peak forward = 0.5 t = 25 s T 103 C - - 16 A FRM p mb current SQW I non-repetitive peak t = 8.3 ms T = 150 C SIN - - 60 A FSM p j(init) forward current t = 10 ms T = 150 C SIN - - 55 A p j(init) Static characteristics V forward voltage I = 8 A T = 25 C - 2 2.9 V F F j I = 8 A T = 150 C Fig. 4 - 1.5 1.85 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 50 A/s - 30 52 ns rr F R F T = 25 C j I = 8 A V = 400 V dI /dt = 500 A/s - 32 40 ns F R F T = 100 C j I = 8 A V = 400 V dI /dt = 500 A/s - 20 - ns F R F T = 25 C Fig. 5 jWeEn Semiconductors BYC8D-600 Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 001aaa020 2 A anode mb mb mounting base connected to cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC8D-600 TO-220AC plastic single-ended package heatsink mounted 1 mounting SOD59 hole 2-lead TO-220AC BYC8D-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 16 September 2018 2 / 10

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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