Product Information

BYV10EX-600P

BYV10EX-600P electronic component of NXP

Datasheet
NXP Semiconductors Rectifiers Ultrafast power diode
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7291 ea
Line Total: USD 0.73

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.7291
10 : USD 0.6256
100 : USD 0.4335
500 : USD 0.3715
1000 : USD 0.3197
2000 : USD 0.2887
5000 : USD 0.2783
10000 : USD 0.2599
25000 : USD 0.2576

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Product
Brand
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BYV10EX-600P Ultrafast power diode 4 July 2017 Product data sheet 1. General description Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Fast switching Isolated plastic package Low leakage current Low forward voltage drop Low thermal resistance Soft recovery characteristic Enhanced avalanche energy capability 3. Applications High frequency switched-mode power supplies Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T 71 C 10 A F(AV) h Fig. 1 Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 71 C 20 A FRM p h current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 75 A FSM p j(init) forward current Fig. 4 t = 8.3 ms T = 25 C sine-wave pulse 83 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 10 A T = 25 C Fig. 6 - 1.55 2 V F F j I = 10 A T = 150 C Fig. 6 - - 1.6 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 50 A/s - 35 50 ns rr F R F T = 25 C Fig. 7 j I = 10 A V = 200 V dI /dt = 200 A/s - 50 - ns F R F T = 25 C Fig. 7 j I = 10 A V = 200 V dI /dt = 200 A/s - 78 - ns F R F T = 125 C Fig. 7 j I = 10 A V = 400 V dI /dt = 500 A/s - 42 - ns F R F T = 25 C Fig. 7 jWeEn Semiconductors BYV10EX-600P Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb K A 1 K cathode 001aaa020 2 A anode mb n.c. mounting base isolated 1 2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV10EX-600P TO-220F plastic single-ended package isolated heatsink mounted 1 SOD113 mounting hole 2-lead TO-220full pac 7. Marking Table 4. Marking codes Type number Marking codes BYV10EX-600P BYV10EX-600P BYV10EX-600P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 4 July 2017 2 / 10

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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