Product Information

BYV410X-600,127

BYV410X-600,127 electronic component of NXP

Datasheet
Diodes - General Purpose, Power, Switching DIODE RECT UFAST DL 600V
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.8848 ea
Line Total: USD 4424

0 - Global Stock
MOQ: 5000  Multiples: 5000
Pack Size: 5000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 50
Multiples : 1
50 : USD 1.2434
100 : USD 1.0623
250 : USD 0.8933

0 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 6000
Multiples : 6000
6000 : USD 0.5861
10000 : USD 0.5636
25000 : USD 0.5494

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

BYV410X-600 Dual enhanced ultrafast power diode Rev. 02 - 7 November 2018 Product data sheet 1. General description Dual enhanced ultrafast power diode in a TO220 F plastic package. 2. Features and benefits High thermal cycling performance Isolated package Low thermal resistance Soft recovery characteristic minimizes power consuming oscillations Very low on-state losses 3. Applications Dual mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 600 V R I non-repetitive peak t = 8.3 ms T = 25 C SIN per - - 132 A FSM p j(init) forward current diode t = 10 ms T = 25 C SIN per - - 120 A p j(init) diode Static characteristics V forward voltage I = 10 A T = 25 C Fig. 4 - 1.4 2.1 V F F j I = 10 A T = 150 C - 1.3 1.9 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 20 35 ns rr F R F T = 25 C Fig. 5 jWeEn Semiconductors BYV410X-600 Dual enhanced ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb A1 A2 2 K cathode K 3 A2 anode 2 sym125 mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BYV410X-600 TO220F BYV410X-600, 127 Tube 50 SOT186A 14-Nov-2013 BYV410X-600/L01 TO220F BYV410X-600/L01 Q Tube 50 SOT186A/L01 14-Nov-2013 BYV410X-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 November 2018 2 / 1 1

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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