Product Information

BYV410-600,127

BYV410-600,127 electronic component of NXP

Datasheet
Diodes - General Purpose, Power, Switching DIODE RECT UFAST DL 600V
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 1.1408 ea
Line Total: USD 57.04

0 - Global Stock
MOQ: 50  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 50
Multiples : 1
50 : USD 1.1408
100 : USD 0.9778
250 : USD 0.8269

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
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Additional Infomation About Product

BYV410-600 Dual enhanced ultrafast power diode Rev. 2 5 August 2011 Product data sheet 1. Product profile 1.1 General description Dual enhanced ultrafast power diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High thermal cycling performance Low thermal resistance Low on state losses Soft recovery characteristic minimizes power consuming oscillations 1.3 Applications Dual mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 600 V RRM voltage I average output current square-wave pulse =0.5 -- 20 A O(AV) T 92 C both diodes mb conducting see Figure 1 see Figure 2 Static characteristics V forward voltage I =10A T =150 C - 1.3 1.9 V F F j I =10A T =25C -1.4 2.1 V F j see Figure 4 Dynamic characteristics t reverse recovery time I =1A V =30V - 2035ns rr F R dI /dt = 100 A/s T =25C F j see Figure 5 Q recovered charge I =1A V =30V - 1528nC r F R dI /dt = 100 A/s F TO-220ABBYV410-600 NXP Semiconductors Dual enhanced ultrafast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb 2 K cathode A1 A2 3 A2 anode 2 K sym125 mb K mounting base cathode 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV410-600 TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BYV410-600 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 5 August 2011 2 of 11

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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