BYV410-600,127 NXP

BYV410-600 Dual enhanced ultrafast power diode Rev. 2 5 August 2011 Product data sheet 1. Product profile 1.1 General description Dual enhanced ultrafast power diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High thermal cycling performance Low thermal resistance Low on state losses Soft recovery characteristic minimizes power consuming oscillations 1.3 Applications Dual mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 600 V RRM voltage I average output current square-wave pulse =0.5 -- 20 A O(AV) T 92 C both diodes mb conducting see Figure 1 see Figure 2 Static characteristics V forward voltage I =10A T =150 C - 1.3 1.9 V F F j I =10A T =25C -1.4 2.1 V F j see Figure 4 Dynamic characteristics t reverse recovery time I =1A V =30V - 2035ns rr F R dI /dt = 100 A/s T =25C F j see Figure 5 Q recovered charge I =1A V =30V - 1528nC r F R dI /dt = 100 A/s F TO-220ABBYV410-600 NXP Semiconductors Dual enhanced ultrafast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb 2 K cathode A1 A2 3 A2 anode 2 K sym125 mb K mounting base cathode 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV410-600 TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BYV410-600 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 5 August 2011 2 of 11