Product Information

BYV410X-600

BYV410X-600 electronic component of NXP

Datasheet
DIODE, DUAL, RECT, UF, 600V, TO220F
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4332 ea
Line Total: USD 1.43

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.4332
10 : USD 1.2121
100 : USD 1.0811
500 : USD 1.0237
1000 : USD 0.9337

Read More Specifications

     
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Forward Voltage Vf Max
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No. Of Pins
Product Range
Svhc
Diode Type
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

BYV410X-600 Enhanced ultrafast dual rectifier diode Rev. 01 29 June 2009 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast dual rectifier diode in a SOT186A (TO-220AB) plastic package. 1.2 Features and benefits High thermal cycling performance Soft recovery characteristic minimizes power consuming oscillations Isolated package Very low on-state losses Low thermal resistance 1.3 Applications Dual mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit I average output square-wave pulse = 0.5 --20 A O(AV) current T 42 C both diodes h conducting see Figure 1 see Figure 2 Dynamic characteristics t reverse recovery I =1A V =30V - 2035ns rr F R time dI /dt = 100 A/s F T = 25 C see Figure 5 j Q recovered charge I =1A V =30V - 1528nC r F R dI /dt = 100 A/s F Static characteristics V forward voltage I =10A T =25C -1.4 2.1 V F F j see Figure 4 I =10A T = 150 C - 1.3 1.9 V F jNXP Semiconductors BYV410X-600 Enhanced ultrafast dual rectifier diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb 2 K cathode A1 A2 3 A2 anode 2 K sym125 mb n.c. mounting base isolated 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV410X-600 TO-220F plastic single-ended package isolated heatsink mounted 1 mounting SOT186A hole 3-lead TO-220full pac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse -600 V RRM voltage V crest working reverse -600 V RWM voltage V reverse voltage DC - 600 V R I average output current square-wave pulse = 0.5 T 42 C both diodes -20 A O(AV) h conducting see Figure 1 see Figure 2 I repetitive peak forward square-wave pulse = 0.5 t = 25 s T 60 C per -20 A FRM p h current diode I non-repetitive peak t = 8.3 ms sine-wave pulse T = 25 C per diode - 132 A FSM p j(init) forward current t = 10 ms sine-wave pulse T 25 C per diode - 120 A p j(init) T storage temperature -40 150 C stg T junction temperature - 150 C j BYV410X-600 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 29 June 2009 2 of 10

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