X-On Electronics has gained recognition as a prominent supplier of PBSS5130QA bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. PBSS5130QA bipolar transistors - bjt are a product manufactured by NXP. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

PBSS5130QA NXP

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Part No.	PBSS5130QA
Manufacturer:	NXP
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, AECQ101, PNP, -30V, DFN1010D
Datasheet:	PBSS5130QA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.468 ea
Line Total: USD 0.47

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

PBSS5130QA More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 07 Jun to Thu. 13 Jun MOQ : 1 Multiples : 1	1 : USD 0.468 10 : USD 0.3494 100 : USD 0.2176 500 : USD 0.149 1000 : USD 0.1147

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We are delighted to provide the PBSS5130QA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5130QA and other electronic components in the Bipolar Transistors - BJT category and beyond.

Additional Infomation About Product

PBSS5130QA 30 V, 1 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -30 V CEO voltage I collector current - - -1 A C I peak collector current t 1 ms pulsed - - -1.5 A CM p R collector-emitter I = -1 A I = -100 mA pulsed - 160 240 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product DFN1010D-3NXP Semiconductors PBSS5130QA 30 V, 1 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 2 E emitter B 3 C collector 4 3 E sym132 4 C collector 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5130QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals 7. Marking Table 4. Marking codes Type number Marking code PBSS5130QA 00 10 10 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PBSS5130QA All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 28 August 2013 2 / 17

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