PBSS5160DS,115 Nexperia

PBSS5160DS,115 electronic component of Nexperia
PBSS5160DS,115 Nexperia
PBSS5160DS,115 Bipolar Transistors - BJT
PBSS5160DS,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS5160DS,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5160DS,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS5160DS,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT LO VCESAT(BISS)TRANS
Datasheet: PBSS5160DS,115 Datasheet (PDF)
Price (USD)
1614: USD 0.2905 ea
Line Total: USD 468.87 
Availability : 2813
  
Ship by Fri. 21 Nov to Thu. 27 Nov
QtyUnit Price
1614$ 0.2905
10000$ 0.2591
100000$ 0.217

Availability 955
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.5264
50$ 0.3362
150$ 0.28
500$ 0.2517
3000$ 0.2393
6000$ 0.2318


Availability 20467
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1614
Multiples : 1
QtyUnit Price
1614$ 0.2905
10000$ 0.2591
100000$ 0.217


Availability 2813
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1614
Multiples : 1
QtyUnit Price
1614$ 0.2905
10000$ 0.2591
100000$ 0.217

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS5160DS,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5160DS,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS5160DS 60 V, 1 A PNP/PNP low V (BISS) transistor CEsat Rev. 03 9 October 2008 Product data sheet 1. Product prole 1.1 General description PNP/PNP low V Breakthrough In Small Signal (BISS) transistor pair in a small CEsat SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n Dual low power switches (e.g. motors, fans) n Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - - 60 V CEO 1 I collector current -- -1A C I peak collector current single pulse -- -2A CM t 1ms p 2 R collector-emitter saturation I = - 1A - 250 330 m CEsat C resistance I = - 100 mA B 1 Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 2 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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