X-On Electronics has gained recognition as a prominent supplier of PBSS5130T,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5130T,215 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5130T,215 Nexperia

PBSS5130T,215 electronic component of Nexperia
PBSS5130T,215 Nexperia
PBSS5130T,215 Bipolar Transistors - BJT
PBSS5130T,215  Semiconductors

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See Product Specifications
Part No. PBSS5130T,215
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 1 A 200MHz 480 mW Surface Mount TO-236AB
Datasheet: PBSS5130T,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0529 ea
Line Total: USD 317.4 
Availability - 17460
Ship by Fri. 23 May to Thu. 29 May
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8730
Ship by Fri. 23 May to Thu. 29 May
MOQ : 4377
Multiples : 1
4377 : USD 0.0594
4855 : USD 0.0535
6000 : USD 0.0489

17460
Ship by Fri. 23 May to Thu. 29 May
MOQ : 6000
Multiples : 3000
6000 : USD 0.0529
12000 : USD 0.0512
15000 : USD 0.049
45000 : USD 0.0474

2880
Ship by Fri. 30 May to Wed. 04 Jun
MOQ : 5
Multiples : 5
5 : USD 0.1896
50 : USD 0.1512
150 : USD 0.132
500 : USD 0.0794
3000 : USD 0.0716
6000 : USD 0.0677

2356
Ship by Wed. 21 May to Fri. 23 May
MOQ : 1
Multiples : 1
1 : USD 0.392
10 : USD 0.2632
100 : USD 0.1638
195 : USD 0.0952
536 : USD 0.0896

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS5130T,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5130T,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS5130T 30 V 1 A PNP low VCEsat (BISS) transistor 9 July 2013 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a small SOT23 CEsat Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Small SMD plastic package Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM Higher efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -30 V CEO voltage I collector current - - -1 A C I peak collector current single pulse t 1 ms - - -3 A CM p R collector-emitter I = -500 mA I = -50 mA pulsed - - 220 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product SOT23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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