X-On Electronics has gained recognition as a prominent supplier of PBSS5130QAZ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5130QAZ Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5130QAZ Nexperia

PBSS5130QAZ electronic component of Nexperia
PBSS5130QAZ Nexperia
PBSS5130QAZ Bipolar Transistors - BJT
PBSS5130QAZ  Semiconductors

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See Product Specifications
Part No. PBSS5130QAZ
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 30 V, 1A PNP low VCE sat (BISS) transi
Datasheet: PBSS5130QAZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 5000
Multiples : 5000
5000 : USD 0.0955
10000 : USD 0.087
25000 : USD 0.0814
50000 : USD 0.0749
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.472
10 : USD 0.3529
100 : USD 0.2198
500 : USD 0.1505
1000 : USD 0.1157
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8751
10 : USD 0.6032
100 : USD 0.1316
500 : USD 0.1139
1000 : USD 0.0912
2500 : USD 0.0828
5000 : USD 0.0756
10000 : USD 0.0725
25000 : USD 0.0694
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PBSS5130QAZ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5130QAZ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS5130QA 30 V, 1 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -30 V CEO voltage I collector current - - -1 A C I peak collector current t 1 ms pulsed - - -1.5 A CM p R collector-emitter I = -1 A I = -100 mA pulsed - 160 240 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS5130QA 30 V, 1 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 2 E emitter B 3 C collector 4 3 E sym132 4 C collector 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5130QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals 7. Marking Table 4. Marking codes Type number Marking code PBSS5130QA 00 10 10 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PBSS5130QA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 August 2013 2 / 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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