PMBF4393,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391 PMBF4392 PMBF4393 N-channel FETs Product specification April 1995NXP Semiconductors Product specification PMBF4391 N-channel FETs PMBF4392 PMBF4393 DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power 3 handbook, halfpage chopper or switching applications in industry. d g s PINNING 12 1 = drain Top view MAM385 2 = source 3= gate Note 1. Drain and source are Fig.1 Simplified outline and symbol, SOT23. interchangeable. Marking code PMBF4391 = p6J PMBF4392 = p6K PMBF4393 = p6G QUICK REFERENCE DATA PMBF4391 PMBF4392 PMBF4393 Drain-source voltage V max. 40 40 40 V DS Drain current V =20 V V =0 I 50 25 5 mA DS GS DSS Gate-source cut-off voltage 42 0.5V V =20 V I =1 nA V DS D (P)GS 10 5 3 V Drain-source resistance (on) at f = 1 kHz I =0 V =0 R 30 60 100 D GS ds on Feedback capacitance at f = 1 MHz V = 12 V V =0 C 3.5 3.5 3.5 pF GS DS rs Turn-off time V =10 V V =0 DD GS I =12 mA V = 12 V t 20 ns D GSM off I = 6 mA V = 7 V t 35 ns D GSM off I = 3 mA V = 5 V t 50 ns D GSM off April 1995 2