PMBFJ110,215

PMBFJ108 PMBFJ109 PMBFJ110 N-channel junction FETs Rev. 4 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits High-speed switching Interchangeability of drain and source connections Low R at zero gate voltage ( 8 for PMBFJ108). DSon 1.3 Applications Analog switches Choppers and commutators Audio amplifiers. 2. Pinning information Table 1. Pinning 1 Pin Description Simplified outline Symbol 1drain 3 2source 1 3gate 3 2 12 sym053 1 Drain and source are interchangeable. SOT23PMBFJ108 PMBFJ109 PMBFJ110 NXP Semiconductors N-channel junction FETs 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PMBFJ108 - plastic surface mounted package 3 leads SOT23 PMBFJ109 PMBFJ110 4. Marking Table 3. Marking 1 Type number Marking code PMBFJ108 38* PMBFJ109 39* PMBFJ110 40* 1 * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 25 V DS V gate-source voltage - 25 V GSO V gate-drain voltage - 25 V GDO I forward gate current (DC) - 50 mA G 1 P total power dissipation T = 25 C -250 mW tot amb T storage temperature 65 +150 C stg T junction temperature - 150 C j 1 Mounted on an FR4 printed-circuit board. 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 R thermal resistance from junction to ambient 500 K/W th(j-a) 1 Mounted on an FR4 printed-circuit board. PMBFJ108 109 110 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 20 September 2011 2 of 9