Product Information

PMR280UN,115

PMR280UN,115 electronic component of NXP

Datasheet
MOSFET UTRENCHMOS (TM) FET
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1019 ea
Line Total: USD 305.7

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.1716
25 : USD 0.1568
100 : USD 0.131
250 : USD 0.117

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 1
3000 : USD 0.3199
3000 : USD 0.3139
3000 : USD 0.3018
3000 : USD 0.2897
9000 : USD 0.2897
21000 : USD 0.2897

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Surface mounted package Footprint 63% smaller than SOT23 Low on-state resistance Low threshold voltage 1.3 Applications Driver circuits Switching in portable appliances 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T 25 C T 150C --20 V V DS j j drain current T =25 C V=4.5V --0.98A I D sp GS gate-source voltage -8 - 8 V V GS Static characteristics drain-source on-state V =4.5 V I = 0.2 A T = 25 C - 280 340 m R DSon GS D j resistance 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 S SOT416 (SC-75) 017aaa253 SOT416PMR280UN NXP Semiconductors N-channel TrenchMOS ultra low level FET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMR280UN SC-75 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code PMR280UN R5 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 20 V DS j j V drain-gate voltage T 25 C T 150 C R =20k -20 V DGR j j GS V gate-source voltage -8 8 V GS I drain current T =25 C V = 4.5 V - 0.98 A D sp GS T = 100 C V = 4.5 V - 0.62 A sp GS I peak drain current T = 25 C pulsed t 10 s - 1.97 A DM sp p P total power dissipation T = 25 C - 0.53 W tot sp T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T = 25 C - 0.44 A S sp I peak source current T = 25 C pulsed t 10 s - 0.88 A SM sp p PMR280UN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 3 February 2012 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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