PD - 95147 IRFZ24NS/LPbF HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D V = 55V DSS Low-profile through-hole (IRFZ24NL) 175C Operating Temperature R = 0.07 Fast Switching DS(on) G Fully Avalanche Rated Lead-Free I = 17A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 D Pak TO-262 highest power capability and the lowest possible on- resistance in any existing surface mount package. The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24NL) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 17 D C GS I T = 100C Continuous Drain Current, V 10V 12 A D C GS I Pulsed Drain Current 68 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 45 W D C Linear Derating Factor 0.30 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 71 mJ AS I Avalanche Current 10 A AR E Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt 6.8 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.3 JC C/W R Junction-to-Ambient ( PCB Mounted,steady-state)** 40 JA 04/19/04IRFZ24NS/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I =1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.07 V =10V, I = 10A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 4.5 S V = 25V, I = 10A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 20 I = 10A g D Q Gate-to-Source Charge 5.3 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 7.6 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 4.9 V = 28V d(on) DD t Rise Time 34 I = 10A r D ns t Turn-Off Delay Time 19 R = 24 d(off) G t Fall Time 27 R = 2.6, See Fig. 10 f D Between lead, L Internal Source Inductance nH S 7.5 and center of die contact C Input Capacitance 370 V = 0V iss GS C Output Capacitance 140 pF V = 25V oss DS C Reverse Transfer Capacitance 65 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 17 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 68 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 10A, V = 0V SD J S GS t Reverse Recovery Time 56 83 ns T = 25C, I = 10A rr J F Q Reverse Recovery Charge 120 180 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 280s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Starting T = 25C, L =1.0mH Uses IRFZ24N data and test conditions J R = 25, I = 10A. (See Figure 12) G AS I 10A, di/dt 280A/s, V V , SD DD (BR)DSS T 175C J ** When mounted on 1 square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994.