PD - 9.1672A IRFZ34E HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V = 60V DSS l Dynamic dv/dt Rating l 175C Operating Temperature R = 0.042 DS(on) l Fast Switching G l Ease of Paralleling I = 28A D Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 28 D C GS I T = 100C Continuous Drain Current, V 10V 20 A D C GS I Pulsed Drain Current 112 DM P T = 25C Power Dissipation 68 W D C Linear Derating Factor 0.46 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 97 mJ AS I Avalanche Current 17 A AR E Repetitive Avalanche Energy 6.8 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case 2.2 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA 11/4/97IRFZ34E Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.056 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.042 V = 10V, I = 17A DS(ON) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 7.6 S V = 25V, I = 17A fs DS D 25 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 48V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I GSS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 30 I = 17A g D Q Gate-to-Source Charge 6.7 nC V = 48V gs DS Q Gate-to-Drain Mille) Charge 12 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 5.1 V = 30V d(on) DD t Rise Time 30 I = 17A r D ns t Turn-Off Delay Time 22 R = 13 d(off) G t Fall Time 30 R = 1.8, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 680 V = 0V iss GS C Output Capacitance 220 pF V = 25V oss DS C Reverse Transfer Capacitance 80 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 28 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 100 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 17A, V = 0V SD J S GS t Reverse Recovery Time 63 95 ns T = 25C, I = 17A rr J F Q Reverse Recovery Charge 130 200 nC di/dt = 100A/s rr t Forward Turn-On Time on Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D Notes: Repetitive rating pulse width limited by I 17 A, di/dt 200A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 175C J Starting T = 25C, L = 670H Pulse width 300s duty cycle 2%. J R = 25, I = 17A. (See Figure 12) G AS