Product Information

PMZB290UN

PMZB290UN electronic component of NXP

Datasheet
MOSFET, N-CH, 20V, SOT883B
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2224 ea
Line Total: USD 0.22

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.2224
10 : USD 0.194
25 : USD 0.1355
100 : USD 0.1058
250 : USD 0.0844
500 : USD 0.0769

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PMZB290UN 20 V, single N-channel Trench MOSFET Rev. 1 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Low threshold voltage Trench MOSFET technology Ultra thin package profile with 0.37 mm height 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C --1 A D GS amb Static characteristics R drain-source on-state V =4.5 V I = 200 mA T = 25 C - 290 350 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT883BPMZB290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 3 D drain 2 G Transparent top view S 017aaa253 SOT883B (DFN1006B-3) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB290UN DFN1006B-3 Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 0.6 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PMZB290UN 0000 0101 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description PMZB290UN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 11 May 2012 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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