Product Information

PMZB390UNEYL

PMZB390UNEYL electronic component of Nexperia

Datasheet
N-Channel 30 V 900mA (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3692 ea
Line Total: USD 0.37

10946 - Global Stock
Ships to you between
Tue. 14 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
8235 - WHS 1


Ships to you between
Wed. 15 May to Mon. 20 May

MOQ : 5
Multiples : 5

Stock Image

PMZB390UNEYL
Nexperia

5 : USD 0.1138
50 : USD 0.1002
150 : USD 0.0933
500 : USD 0.0881
2500 : USD 0.0841
5000 : USD 0.082

10946 - WHS 2


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

PMZB390UNEYL
Nexperia

1 : USD 0.3692
10 : USD 0.2519
100 : USD 0.1184
1000 : USD 0.0862
2500 : USD 0.0828
10000 : USD 0.0633
50000 : USD 0.0621

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

PMZB390UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM Ultra thin package profile of 0.37 mm 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 0.9 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 0.9 A T = 25 C - 390 470 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia PMZB390UNE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 3 D drain G Transparent top view DFN1006B-3 (SOT883B) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB390UNE DFN1006B-3 DFN1006B-3: leadless ultra small plastic package 3 solder SOT883B lands body 1.0 x 0.6 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMZB390UNE 0101 0100 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB390UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 March 2015 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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