X-On Electronics has gained recognition as a prominent supplier of PSMN1R6-30BL,118 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN1R6-30BL,118 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN1R6-30BL,118 NXP

PSMN1R6-30BL,118 electronic component of NXP
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Part No.PSMN1R6-30BL,118
Manufacturer: NXP
Category:MOSFET
Description: MOSFET N CH 30V 100A D2PAK
Datasheet: PSMN1R6-30BL,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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PSMN1R6-30BL N-channel 30 V 1.9 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 - - 306 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state resistance V =10V I =25A T =100C - 2.21 2.6 m R DSon GS D j see Figure 13 see Figure 6 V =10V I =25A T =25C - 1.58 1.9 m GS D j see Figure 6 Dynamic characteristics Q gate-drain charge V =4.5 V I =25A V =15V -27 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 101 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C --1.7 J DS(AL)S GS j(init) avalanche energy I =100 A V 30 V R =50 D sup GS unclamped 1 Continuous current is limited by package.PSMN1R6-30BL Nexperia N-channel 30 V 1.9 m logic level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R6-30BL D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN1R6-30BL PSMN1R6-30BL PSMN1R6-30BL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 22 March 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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