X-On Electronics has gained recognition as a prominent supplier of PSMN1R6-40YLC:115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R6-40YLC:115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN1R6-40YLC:115 Nexperia

PSMN1R6-40YLC:115 electronic component of Nexperia
PSMN1R6-40YLC:115 Nexperia
PSMN1R6-40YLC:115 MOSFETs
PSMN1R6-40YLC:115  Semiconductors

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Part No. PSMN1R6-40YLC:115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-channel 40 V 1.55 mo FET
Datasheet: PSMN1R6-40YLC:115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1500
Multiples : 1500
1500 : USD 0.9217
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PSMN1R6-40YLC:115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R6-40YLC:115 and other electronic components in the MOSFETs category and beyond.

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PSMN1R6-40YLC N-channel 40 V 1.55 m logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 150C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads Ultra low Rdson and low parasitic inductance 1.3 Applications DC-to-DC converters Load switching Power OR-ing Server power supplies Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 150 C - - 40 V DS j I drain current T = 25 C V = 10 V Fig. 1 1 - - 100 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 288 W tot mb T junction temperature -55 - 150 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 1.45 1.8 m DSon GS D j resistance Fig. 12 V = 10 V I = 25 A T = 25 C - 1.25 1.55 m GS D j Fig. 12 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 25 A V = 20 V - 15.3 - nC GD GS D DS Fig. 14Nexperia PSMN1R6-40YLC N-channel 40 V 1.55 m logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V = 4.5 V I = 25 A V = 20 V - 59 - nC G(tot) GS D DS Fig. 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source mbb076 S 4 G gate mb D mounting base connected to drain 1 2 3 4 LFPAK Power- SO8 (SOT1023) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R6-40YLC LFPAK Plastic single-ended surface-mounted package (LFPAK) 4 leads SOT1023 Power-SO8 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 150 C - 40 V DS j V drain-gate voltage 25 C T 150 C R = 20 k - 40 V DGR j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 1 - 100 A D GS mb V = 10 V T = 100 C Fig. 1 1 - 100 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 1304 A DM p mb P total power dissipation T = 25 C Fig. 2 - 288 W tot mb T storage temperature -55 150 C stg PSMN1R6-40YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 22 August 2012 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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