2N6397G ON Semiconductor

2N6397G electronic component of ON Semiconductor
2N6397G ON Semiconductor
2N6397G SCRs
2N6397G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N6397G SCRs across the USA, India, Europe, Australia, and various other global locations. 2N6397G SCRs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

Part No. 2N6397G
Manufacturer: ON Semiconductor
Category: SCRs
Description: SCRs THY 12A 400V SCR
Datasheet: 2N6397G Datasheet (PDF)
Price (USD)
1: USD 2.3375 ea
Line Total: USD 2.34 
Availability : 641
  
Ship by Wed. 15 Oct to Fri. 17 Oct
QtyUnit Price
1$ 2.3375
10$ 1.44
100$ 0.8954
500$ 0.7535
1000$ 0.7535

Availability 641
Ship by Wed. 15 Oct to Fri. 17 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.3375
10$ 1.44
100$ 0.8954
500$ 0.7535
1000$ 0.7535

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Forward Voltage Drop
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

2N6397G Alternative Parts

Image Part-Description
Stock Image 2N6397G Littelfuse
SCRs THY 12A 400V SCR
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock: 24

We are delighted to provide the 2N6397G from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6397G and other electronic components in the SCRs category and beyond.

Image Part-Description
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Image Part-Description
Stock Image 2N6400G
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Stock Image 2N6403TG
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Stock Image 2N6404G
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Stock Image 2N6405G
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Stock Image 2N6505G
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Stock Image TS820-600T
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Thyristors Datasheet 2N6394 Surface Mount 50 - 800V Pb Description The 2N6394 is designed primarily for half-wave AC control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions Blocking Voltage to 800 V for Greater Parameter These are PbFree Devices Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Additional Information Pin Out Resources Accessories Samples CASE 221A STYLE 4 1 2 Functional Diagram 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 02/11/21Thyristors Datasheet 2N6394 Surface Mount 50 - 800V Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit 2N6394 50 Peak Repetitive Off-State Voltage (Note 1) 2N6395 V , 100 DRM V (T = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6397 V 400 J RRM 2N6399 800 On-State RMS Current I 12 A T (RMS) (180 Conduction Angles T = 90C) C Peak NonRepetitive Surge Current I 100 A TSM (1/2 Cycle, Sine Wave, 60 Hz, T = 90C) J Circuit Fusing Considerations (t = 8.3 ms) I 40 As 2t Forward Peak Gate Power (Pulse Width 1.0 s, T = 90C) P 20 W C GM Forward Average Gate Power (t = 8.3 ms, T = 90C) P 0.5 W C G(AV) Forward Peak Gate Current (Pulse Width 1.0 s, T = 90C) I 2.0 A C GM Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +125 C stg Indicates JEDEC Registered Data Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R 2.0 C/W 8JC Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Indicates JEDEC Registered Data. Electrical Characteristics - OFF (TC = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 1.0 A *Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 100C I - - 2.0 mA D DRM RRM J RRM Electrical Characteristics - ON (TC = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Forward OnState Voltage (Note 2) (I = 24 A Peak) V 1.7 2.2 V TM TM Gate Trigger Voltage (Continuous DC), All Quadrants I 5.0 30 mA GT (Continuous dc) (V = 12 Vdc, R = 100 Ohms) D L Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 100 Ohms) V 0.7 1.5 V D L GT Gate NonTrigger Voltage (V = 12 Vdc, R = 100 Ohms, T = 125C) V 0.2 V D L J GD Holding Current (V = 12 Vdc, Initiating Current = 200 mA, Gate Open) I 6.0 50 mA D H Turn-On Time (I = 12 A, I = 40 mAdc, V = Rated V ) t 1.0 2.0 s TM GT D DRM gt - - 15 (I = 12 A, I = 12 A) TM R Turn-Off Time (V = Rated V ) t s D DRM q (I = 12 A, I = 12 A, T = 125C) - - 35 TM R J Indicates JEDEC Registered Data 2. Pulse Test: Pulse Width 300 sec, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 02/11/21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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