X-On Electronics has gained recognition as a prominent supplier of 2N7000G MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7000G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7000G ON Semiconductor

2N7000G electronic component of ON Semiconductor
2N7000G ON Semiconductor
2N7000G MOSFETs
2N7000G  Semiconductors

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See Product Specifications
Part No. 2N7000G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 200mA N-Channel
Datasheet: 2N7000G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
878: USD 0.2964 ea
Line Total: USD 260.24 
Availability - 1914
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ: 878  Multiples: 1
Pack Size: 1
Availability Price Quantity
425
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 353
Multiples : 1
353 : USD 0.7374

1914
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 878
Multiples : 1
878 : USD 0.2964
885 : USD 0.2938

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
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Configuration
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Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the 2N7000G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7000G and other electronic components in the MOSFETs category and beyond.

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2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N Channel TO92 Features 2N7000G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (V = 0, I = 10 Adc) V 60 Vdc GS D (BR)DSS Zero Gate Voltage Drain Current I DSS (V = 48 Vdc, V = 0) 1.0 Adc DS GS (V = 48 Vdc, V = 0, T = 125C) 1.0 mAdc DS GS J GateBody Leakage Current, Forward (V = 15 Vdc, V = 0) I 10 nAdc GSF DS GSSF ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (V = V , I = 1.0 mAdc) V 0.8 3.0 Vdc DS GS D GS(th) Static DrainSource OnResistance r DS(on) (V = 10 Vdc, I = 0.5 Adc) 5.0 GS D (V = 4.5 Vdc, I = 75 mAdc) 6.0 GS D DrainSource OnVoltage V Vdc DS(on) (V = 10 Vdc, I = 0.5 Adc) 2.5 GS D (V = 4.5 Vdc, I = 75 mAdc) 0.45 GS D OnState Drain Current (V = 4.5 Vdc, V = 10 Vdc) I 75 mAdc GS DS d(on) Forward Transconductance (V = 10 Vdc, I = 200 mAdc) g 100 mhos DS D fs DYNAMIC CHARACTERISTICS Input Capacitance C 60 pF iss (V = 25 V, V = 0, DS GS Output Capacitance C 25 oss f = 1.0 MHz) Reverse Transfer Capacitance C 5.0 rss SWITCHING CHARACTERISTICS (Note 1) ns TurnOn Delay Time t 10 on (V = 15 V, I = 500 mA, DD D R = 25 , R = 30 , V = 10 V) G L gen Turn Off Delay Time t 10 off 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping 2N7000G TO92 1000 Units / Bulk (Pb Free) 2N7000RLRAG TO92 2000 Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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