X-On Electronics has gained recognition as a prominent supplier of BC550CBU Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC550CBU Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC550CBU ON Semiconductor

BC550CBU electronic component of ON Semiconductor
BC550CBU ON Semiconductor
BC550CBU Bipolar Transistors - BJT
BC550CBU  Semiconductors

Images are for reference only
See Product Specifications
Part No. BC550CBU
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN 45V 100mA HFE/800
Datasheet: BC550CBU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1357: USD 0.0921 ea
Line Total: USD 124.98 
Availability - 18915
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ: 1357  Multiples: 1
Pack Size: 1
Availability Price Quantity
18915
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 1357
Multiples : 1
1357 : USD 0.0921
5000 : USD 0.0673
10000 : USD 0.0614
30000 : USD 0.0488
50000 : USD 0.0485
100000 : USD 0.0483
150000 : USD 0.048
250000 : USD 0.0478

271
Ship by Wed. 25 Jun to Mon. 30 Jun
MOQ : 5
Multiples : 5
5 : USD 0.1798
50 : USD 0.1448
150 : USD 0.1274
1000 : USD 0.0741
2000 : USD 0.0671
5000 : USD 0.0636

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
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Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC550CBU from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC550CBU and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor TO92 BC546 / BC547 / BC548 / CASE 135AN BC549 / BC550 1 2 3 Features Switching and Amplifier HighVoltage: BC546, V = 65 V CEO TO92 LowNoise: BC549, BC550 CASE 135AR Complement to BC556, BC557, BC558, BC559, and BC560 1 2 These are PbFree Devices 3 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS MARKING DIAGRAM Parameter Symbol Value Unit CollectorBase Voltage V V CBO BC546 80 ABC BC547 / BC550 50 5xyz BC548 / BC549 30 YWW CollectorEmitter Voltage V V CEO BC546 65 BC547 / BC550 45 BC548 / BC549 30 BC5xyz = Device Code EmitterBase Voltage V V EBO x = 4 or 5 BC546 / BC547 6 y = 6, 7, 8, 9 or 0 BC548 / BC549 / BC550 5 z = A, B, C Collector Current (DC) I 100 mA A = Assembly Location C Y = Year Collector Power Dissipation P 500 mW C WW = Work Week Junction Temperature T 150 C J Storage Temperature Range T 65 to +150 C STG ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information on page 4 of device. If any of these limits are exceeded, device functionality should not be this data sheet. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: August, 2021 Rev. 4 BC550/DBC546 / BC547 / BC548 / BC549 / BC550 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cutoff Current V = 30 V, I = 0 15 nA CBO CB E h DC Current Gain V = 5 V, I = 2 mA 110 800 FE CE C V (sat) CollectorEmitter Saturation Voltage I = 10 mA, I = 0.5 mA 90 250 mV CE C B I = 100 mA, I = 5 mA 250 600 C B V (sat) BaseEmitter Saturation Voltage I = 10 mA, I = 0.5 mA 700 mV BE C B I = 100 mA, I = 5 mA 900 C B V (on) BaseEmitter On Voltage V = 5 V, I = 2 mA 580 660 700 mV BE CE C V = 5 V, I = 10 mA 720 CE C f Current Gain Bandwidth Product V = 5 V, I = 10 mA, 300 MHz T CE C f = 100 MHz C Output Capacitance V = 10 V, I = 0, f = 1 MHz 3.5 6.0 pF ob CB E C Input Capacitance V = 0.5 V, I = 0, f = 1 MHz 9 pF ib EB C NF Noise Figure BC546 / BC547 / BC548 V = 5 V, I = 200 A, 2.0 10.0 dB CE C f = 1 kHz, R = 2 k G BC549 / BC550 1.2 4.0 BC549 V = 5 V, I = 200 A, 1.4 4.0 CE C R = 2 k , f = 30 to 15000 MHz G BC550 1.4 3.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification A B C h 110 ~ 220 200 ~ 450 420 ~ 800 FE www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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