BSB015N04NX3GXUMA1 Infineon

n-Channel Power MOSFET OptiMOS BSB015N04NX3 G Data Sheet 2.4, 2011-05-24 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB015N04NX3 G 1 Description OptiMOS40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 40V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. OptiMOS products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications Features Optimized for high switching frequency DC/DC converter 100% avalanche tested Excellent gate charge x R product (FOM) DS(on) 1) Qualified according to JEDEC for target applications Pb-free plating RoHS compliant Very low on-resistance R DS(on) Low profile (<0.7 mm) Low parasitic inductance Double.sided cooling Compatible with DirectFET package MX footprint and outline 100% Rg Tested Applications On board power for server Power managment for high performance computing Synchronous rectification High power density point of load converters Table 1 Key Performance Parameters Parameter Value Unit Related Links V 40 V IFX OptiMOS webpage DS R 1.5 m IFX OptiMOS product brief DS(on),max I 180 A IFX OptiMOS spice models D Q 86 nC IFX Design tools OSS Q . 107 g typ Type Package Marking BSB015N04NX3 G MG-WDSON-2 0204 1) J-STD20 and JESD22 Final Data Sheet 1 2.4, 2011-05-24