BSB028N06NN3GXUMA1 is a discrete Power MOSFET transistor manufactured by Infineon Technologies. It is a type of power switch and is suitable for a variety of switching applications due to its high-performance and robust construction. The device features an advanced trench cell and low On-resistance technology which allows it to provide high efficiency switching while minimizing losses due to heat generation. The device is packaged in a SOT223 format and features a maximum drain-source voltage of 20V and a maximum drain-source current of 4A.