BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The BSP19AT1G, NSVBSP19AT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 350 C B Collector-Base Cutoff Current I nAdc CBO (V = 400 Vdc, I = 0) 20 CB E Emitter-Base Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 10 EB C ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 20 mAdc, V = 10 Vdc) 40 C CE Current-Gain Bandwidth Product f MHz T (I = 10 mAdc, V = 10 Vdc, f = 5.0 MHz) 70 C CE Collector-Emitter Saturation Voltage V Vdc CE(sat) (I = 50 mAdc, I = 4.0 mAdc) 0.5 C B Base-Emitter Saturation Voltage V Vdc BE(sat) (I = 50 mAdc, I = 4.0 mAdc) 1.3 C B 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%