Product Information

CAT93C46RLI-G

CAT93C46RLI-G electronic component of ON Semiconductor

Datasheet
EEPROM Serial-Microwire 1K-bit 128 x 8/64 x 16 2.5V/3.3V/5V 8-Pin PDIP Tube

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1394: USD 0.3018 ea
Line Total: USD 420.71

0 - Global Stock
MOQ: 1394  Multiples: 1394
Pack Size: 1394
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

CAT93C46RLI-G
ON Semiconductor

1 : USD 0.5906
25 : USD 0.4476
100 : USD 0.373
500 : USD 0.2357
1000 : USD 0.2238
2500 : USD 0.2218
5000 : USD 0.2189

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1394
Multiples : 1394

Stock Image

CAT93C46RLI-G
ON Semiconductor

1394 : USD 0.3018

0 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 274
Multiples : 274

Stock Image

CAT93C46RLI-G
ON Semiconductor

274 : USD 0.3886
500 : USD 0.2357
1000 : USD 0.2238
2500 : USD 0.2218
5000 : USD 0.2189

     
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RoHS - XON
Icon ROHS
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CAT93C46R 1 kb Microwire Serial EEPROM Description The CAT93C46R is a 1 kb CMOS Serial EEPROM device which is organized as either 64 registers of 16 bits or 128 registers of 8 bits, as CAT93C46R Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Value Units Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Block Mode, V = 5 V, T = 25C CC A Table 3. D.C. OPERATING CHARACTERISTICS (V = +1.8 V to +5.5 V, unless otherwise specified.) CC Symbol Parameter Test Conditions Min Max Units I Power Supply Current (Write) f = 1 MHz 1 mA CC1 SK V = 5.0 V CC I Power Supply Current (Read) f = 1 MHz 500 A CC2 SK V = 5.0 V CC I Power Supply Current (Standby) (x8 Mode) CS = 0 V 10 A SB1 ORG = GND I Power Supply Current (Standby) (x16 Mode) CS = 0 V 10 A SB2 ORG = Float or V CC I Input Leakage Current V = 0 V to V 2 A LI IN CC I Output Leakage Current (Including ORG pin) V = 0 V to V , 2 A LO OUT CC CS = 0 V V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 1.8 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 1.8 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V 0.4 V OL1 CC I = 2.1 mA OL V Output High Voltage 4.5 V V < 5.5 V 2.4 V OH1 CC I = 400 A OH V Output Low Voltage 1.8 V V < 4.5 V 0.2 V OL2 CC I = 1 mA OL V Output High Voltage 1.8 V V < 4.5 V V 0.2 V OH2 CC CC I = 100 A OH

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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