Product Information

CAV25640VE-GT3

CAV25640VE-GT3 electronic component of ON Semiconductor

Datasheet
ON Semiconductor EEPROM 64KB SPI SER CMOS EEPROM

Manufacturer: ON Semiconductor
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Price (USD)

1: USD 1.3928 ea
Line Total: USD 1.39

84 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
64 - WHS 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 1
Multiples : 1

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CAV25640VE-GT3
ON Semiconductor

1 : USD 0.711
10 : USD 0.6033
30 : USD 0.5439
100 : USD 0.4764
500 : USD 0.4472
1000 : USD 0.4331

     
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RoHS - XON
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DATA SHEET www.onsemi.com EEPROM Serial 64-Kb SPI Automotive Grade 1 SOIC8 TSSOP8 CAV25640 V SUFFIX Y SUFFIX CASE 751BD CASE 948AL Description The CAV25640 is a EEPROM Serial 64Kb SPI Automotive Grade 1 device internally organized as 8Kx8 bits. This features a PIN CONFIGURATION 64byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) 1 CS V CC input. In addition, the required bus signals are clock input (SCK), data SO HOLD input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAV25640 device. The SCK WP device features software and hardware write protection, including V SI SS partial as well as full array protection. SOIC (V), TSSOP (Y) Features Automotive AECQ100 Grade 1 (40C to +125C) Qualified PIN FUNCTION 10 MHz SPI Compatible 2.5 V to 5.5 V Supply Voltage Range Pin Name Function SPI Modes (0,0) & (1,1) CS Chip Select 64byte Page Write Buffer SO Serial Data Output Selftimed Write Cycle WP Write Protect Hardware and Software Protection V Ground SS CAV Prefix for Automotive and Other Applications Requiring Site SI Serial Data Input and Change Control SCK Serial Clock Block Write Protection 1 1 HOLD Hold Transmission Input Protect / , / or Entire EEPROM Array 4 2 Low Power CMOS Technology V Power Supply CC 1,000,000 Program/Erase Cycles 100 Year Data Retention ORDERING INFORMATION SOIC and TSSOP 8lead Packages See detailed ordering and shipping information in the package This Device is PbFree, Halogen Free/BFR Free, and RoHS dimensions section on page 10 of this data sheet. Compliant V CC SI CS CAV25640 SO WP HOLD SCK V SS Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: November, 2021 Rev. 3 CAV25640/DCAV25640 MARKING DIAGRAMS 25640F AYMXXX S64F AYMXXX (SOIC8) (TSSOP8) 25640F = Specific Device Code S64F = Specific Device Code A = Assembly Location A = Assembly Location Y = Production Year (Last Digit) Y = Production Year (Last Digit) M = Production Month (19, O, N, D) M = Production Month (19, O, N, D) XXX = Last Three Digits of XXX = Last Three Digits of XXX = Assembly Lot Number XXX = Assembly Lot Number = PbFree Package = PbFree Package Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Read Mode) Read, V = 5.5 V, 5 MHz, SO open 2 mA CCR CC I Supply Current (Write Mode) Write, V = 5.5 V, 5 MHz, SO open 3 mA CCW CC I Standby Current V = GND or V , CS = V , 2 A SB1 IN CC CC WP = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , 5 A SB2 IN CC CC WP = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , 1 2 A LO CC V = GND or V OUT CC V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL1 OL V Output High Voltage I = 1.6 mA V 0.8 V V OH1 OH CC www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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