Ordering number : EN8993A ECH8420 N-Channel Power MOSFET ECH8420 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =7A 14.5 S DS D R (on)1 I =7A, V =4.5V 5.2 6.8 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =4A, V =2.5V 8 11.5 m DS D GS R (on)3 I =2A, V =1.8V 15 22.5 m DS D GS Input Capacitance Ciss 2430 pF Output Capacitance Coss V =10V, f=1MHz 410 pF DS Reverse Transfer Capacitance Crss 330 pF Turn-ON Delay Time t (on) 21 ns d Rise Time t 88 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 210 ns d Fall Time t 115 ns f Total Gate Charge Qg 29 nC Gate-to-Source Charge Qgs V =10V, V =4.5V, I =14A 4.8 nC DS GS D Gate-to-Drain Miller Charge Qgd 8.7 nC Diode Forward Voltage V I =14A, V =0V 0.75 1.2 V SD S GS Switching Time Test Circuit V V =10V IN DD 4.5V 0V I =7A D V IN R =1.43 L D V OUT PW=10s D.C.1% G ECH8420 P.G 50 S Ordering Information Device Package Shipping memo ECH8420-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No.8993-2/7