Ordering number : ENA1758A ECH8502 Bipolar Transistor ECH8502 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)50V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)500mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (260)290 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (45)25 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)2.5A, I =(--)125mA (--120)80 (--200)120 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)2.5A, I =(--)125mA (--)0.85 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--50)100 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (30)30 ns on Storage Time t See speci ed Test Circuit. (180)280 ns stg Fall Time t (20)25 ns f Note : The speci cations shown above are for each individual transistor. Switching Time Test Circuit I B1 PW=20s Vout D.C.1% I B2 INPUT R V B R R L 50 + + 100F 470F V = --5V V =25V BE CC I =20I = --20I =2.5A C B1 B2 (For PNP, the polarity is reversed.) Ordering Information Device Package Shipping memo ECH8502-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1758-2/8