MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 m FCMT099N65S3 Description SUPERFET III MOSFET is ON Semiconductors brand new high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize V R MAX I MAX DSS DS(ON) D conduction loss, provide superior switching performance, and 650 V 99 m 10 V 30 A withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server / D telecom power, adaptor and solar inverter applications. The Power88 package is an ultraslim surfacemount package 2 (1mm high) with a low profile and small footprint (8x8 mm ). SUPERFET III MOSFET in a Power88 package offers excellent G switching performance due to lower parasitic source inductance and S1: Driver Source separated power and drive sources. Power88 offers Moisture S2: Power Source S1 S2 Sensitivity Level 1 (MSL 1). POWER MOSFET Features 700 V T = 150C J Typ. R = 87 m DS(on) Ultra Low Gate Charge (Typ. Q = 56 nC) g S2 Low Effective Output Capacitance (Typ. C = 500 pF) oss(eff.) S2 S1 100% Avalanche Tested G These Devices are PbFree and are RoHS Compliant PQFN4 8X8 2P CASE 483AP Applications Telecom / Server Power Supplies MARKING DIAGRAM Industrial Power Supplies UPS / Solar Y&Z&3&K FCMT 099N65S3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot Code FCMT099N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2020 Rev. 5 FCMT099N65S3/DFCMT099N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 30 A D C Continuous (T = 100C) 19 C I Drain Current Pulsed (Note 1) 75 A DM E Single Pulsed Avalanche Energy (Note 2) 145 mJ AS I Avalanche Current (Note 1) 4.4 A AS E Repetitive Avalanche Energy (Note 1) 2.27 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 227 W D C Derate Above 25C 1.82 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 4.4 A, R = 25 , starting T = 25C. AS G J 3. I 15 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.55 C/W JC R Thermal Resistance, Junction to Ambient, Max. (Note 4) 45 JA 2 4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping FCMT099N65S3 FCMT099N65S3 PQFN8 13 13.3 mm 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2