DMG4822SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Input Capacitance ID max BVDSS RDS(ON) max TA = +25C Low Input/Output Leakage Low Gate Resistance 30V 21m V = 10V 10A GS Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to meet the stringent requirements of PPAP Capable (Note 4) Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Mechanical Data General Purpose Interfacing Switch Case: SO-8 Power Management Functions Case Material: Molded Plastic,Gree Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Analog Switch Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Finish Annealed over Copper e3 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) D1 D2 S1S1 D1D1 G1 D1 G1 D1 S2 D2 S2 D2 G2 G1 G2G2 D2 D2 Top View S1 S2 Internal Schematic N-Channel MOSFET N-Channel MOSFET Ordering Information (Note 5) Part Number Case Packaging DMG4822SSDQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG4822SSDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C 10 A A Continuous Drain Current (Note 6) V = 10V I GS D State 6.6 T = +85C A Pulsed Drain Current (Note 7) I 60 A DM Avalanche Current (Notes 8 & 9) I 1.68 A AR Repetitive Avalanche Energy, L = 0.3mH (Notes 8 & 9) E 12.8 mJ AR Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 1.42 W D Thermal Resistance, Junction to Ambient (Note 6) 88.4 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 13.4 21 V = 10V, I = 8.5A GS D Static Drain-Source On-Resistance m R DS(ON) 19.5 32.5 V = 4.5V, I = 6A GS D Forward Transfer Admittance Y 20 mS V = 5V, I = 8.5A fs DS D Diode Forward Voltage 0.4 1.0 V VSD VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance 478.9 pF Ciss V = 16V, V = 0V, DS GS Output Capacitance 96.7 pF C oss f = 1MHz Reverse Transfer Capacitance 61.4 pF C rss Gate Resistance 1.1 R V = 0V, V = 0V, f = 1MHz g DS GS 5 nC Total Gate Charge (V = 4.5V) Q GS g Total Gate Charge (V = 10V) Q 10.5 nC V = 10V, V = 15V, GS g GS DS Gate-Source Charge Q 1.8 nC I = 8.5A gs D Gate-Drain Charge Q 1.6 nC gd Turn-On Delay Time t 2.9 ns D(ON) Turn-On Rise Time t 7.9 ns R V = 15V, V = 10V, DS GS Turn-Off Delay Time 14.6 ns R = 1.8, R = 3 t L G D(OFF) Turn-Off Fall Time 3.1 ns t F Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 8. Repetitive rating, pulse width limited by junction temperature. 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AR AR J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMG4822SSDQ November 2017 Diodes Incorporated www.diodes.com Document number: DS40332 Rev. 2 - 2