X-On Electronics has gained recognition as a prominent supplier of SIS110DN-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SIS110DN-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SIS110DN-T1-GE3 Vishay

SIS110DN-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SIS110DN-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Datasheet: SIS110DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6222 ea
Line Total: USD 0.62

Availability - 122308
Ships to you between
Thu. 27 Jun to Mon. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1

SIS110DN-T1-GE3 More Buying Options & Price Grid(s)
Availability Price Quantity
27009 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8775
10 : USD 0.7352
100 : USD 0.5095
500 : USD 0.4259
1000 : USD 0.3169
5000 : USD 0.3039

48 - WHS 2


Ships to you between
Fri. 28 Jun to Wed. 03 Jul

MOQ : 1
Multiples : 1
1 : USD 0.6269
10 : USD 0.5284
30 : USD 0.4746
100 : USD 0.4137
500 : USD 0.3665
1000 : USD 0.3548

122308 - WHS 3


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.6222
10 : USD 0.5244
100 : USD 0.3818
500 : USD 0.3289
1000 : USD 0.2875
3000 : USD 0.253
6000 : USD 0.253
9000 : USD 0.2449
24000 : USD 0.2404

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the SIS110DN-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIS110DN-T1-GE3 and other electronic components in the MOSFET category and beyond.

Additional Infomation About Product

The SIS110DN–T1–GE3 with MOSFET 100V Vds 20V Vgs PowerPAK 1212–8 is a N–Channel MOSFET from Vishay Semiconductors. It is a low on–resistance, low voltage MOSFET that delivers a maximum drain–source voltage of 100V and a maximum drain–source current of 11A. This MOSFET includes a PowerPAK 1212–8 package that has a low profile and allows for efficient and cost–effective thermal management solutions. This MOSFET is ideal for input/output (I/O) between 0V and 100V as well as load and line switching applications. It also offers fast switching speeds with a low voltage gate–source threshold (Vgs).

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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