Product Information

FDB86363_F085

FDB86363_F085 electronic component of ON Semiconductor

Datasheet
MOSFET N-Channel Power Trench MOSFET

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.7348 ea
Line Total: USD 5.73

723 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
709 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

FDB86363_F085
ON Semiconductor

1 : USD 5.213
10 : USD 4.369
30 : USD 3.8553
100 : USD 3.4263

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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MOSFET - POWERTRENCH , N-Channel 80 V, 110 A, 2.4 m FDB86363-F085 Features Typical R = 2.0 m at V = 10 V, I = 80 A DS(on) GS D www.onsemi.com Typical Q = 131 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability NChannel AECQ101 Qualified and PPAP Capable (Pin 2) This Device is PbFree, Halide Free and is RoHS Compliant D Applications Automotive Engine Control Power Train Management G Solenoid and Motor Drivers (Pin 1) Integrated Starter/Alternator S (Pin 3) Primary Switch for 12 V Systems D 2 2 1 G S 3 2 D PAK3 (TO263, 3LEAD) CASE 418AJ PIN CONFIGURATION Position Designation Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source MARKING DIAGRAM Y&Z&3&K FDB86363 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDB86363 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: January, 2020 Rev. 4 FDB86363F085/DFDB86363F085 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) J Symbol Parameter Ratings Units V DraintoSource Voltage 80 V DSS V GatetoSource Voltage 20 V GS I A Drain Current Continuous (V = 10 V) (Note 1) T = 25C 110 D GS C Pulsed T = 25C See Figure 4 C E Single Pulse Avalanche Energy (Note 2) 512 mJ AS P Power Dissipation 300 W D Derate Above 25C 2.0 W/C TJ, T Operating and Storage Temperature 55 to +175 C STG RJC Thermal Resistance, Junction to Case 0.5 C/W RJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 0.25 mH, I = 64 A, V = 80 V during inductor charging and V = 0 V during time in avalanche. J AS DD DD 3. RJA is the sum of the junctiontocase and casetoambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while R is determined by the board design. The maximum rating JA 2 presented here is based on mounting on a 1 in pad of 2 oz copper. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Shipping FDB86363 FDB86363F085 D2PAK (TO263) 800 units / Tape & Reel (PbFree/Halide Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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