FDB86566-F085 ON Semiconductor

FDB86566-F085 electronic component of ON Semiconductor
FDB86566-F085 ON Semiconductor
FDB86566-F085 MOSFETs
FDB86566-F085  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDB86566-F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDB86566-F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDB86566-F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V N-channel LL PowerTrench MOSFET
Datasheet: FDB86566-F085 Datasheet (PDF)
Price (USD)
800: USD 1.5096 ea
Line Total: USD 1207.68 
Availability : 0
  
QtyUnit Price
800$ 1.5096

Availability 0
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 1.5096


Availability 0
Ship by Tue. 11 Nov to Thu. 13 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.8448
10$ 2.8273
25$ 2.6719
100$ 2.2783
500$ 1.8744

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDB86566-F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDB86566-F085 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDB86566-F085 N-Channel PowerTrench MOSFET FDB86566-F085 D D N-Channel PowerTrench MOSFET 60 V, 110 A, 2.7 m G Features G S Typical R = 2.2 m at V = 10V, I = 80 A DS(on) GS D Typical Q = 80 nC at V = 10V, I = 80 A g(tot) GS D TO-263 S UIS Capability FDB SERIES RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12V Systems MOSFET Maximum Ratings T = 25C unless otherwise noted. J Symbol Parameter Ratings Units V Drain-to-Source Voltage 60 V DSS V Gate-to-Source Voltage 20 V GS Drain Current - Continuous (V =10) (Note 1) T = 25C 110 GS C I A D Pulsed Drain Current T = 25C See Figure 4 C E Single Pulse Avalanche Energy (Note 2) 193 mJ AS Power Dissipation 176 W P D o o Derate Above 25C1.2W/ C o T , T Operating and Storage Temperature -55 to + 175 C J STG o R Thermal Resistance, Junction to Case 0.85 C/W JC o R Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 C/W JA Notes: 1: Current is limited by bondwire configuration. 2: Starting T = 25C, L = 50uH, I = 88A, V = 60V during inductor charging and V = 0V during time in avalanche. J AS DD DD 3: R is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB86566 FDB86566 -F085 D2-PAK(TO-263) 330mm 24mm 800 units 2016 Semiconductor Components Industries, LLC. 1 Publication Order Number: August-2017, Rev. 2 FDB86566-F085/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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