FDC608PZ ON Semiconductor

FDC608PZ electronic component of ON Semiconductor
FDC608PZ ON Semiconductor
FDC608PZ MOSFETs
FDC608PZ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDC608PZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDC608PZ MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDC608PZ
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Datasheet: FDC608PZ Datasheet (PDF)
Price (USD)
1: USD 0.3462 ea
Line Total: USD 0.35 
Availability : 157472
  
Ship by Wed. 22 Oct to Fri. 24 Oct
QtyUnit Price
1$ 0.3462
10$ 0.2713
100$ 0.23
500$ 0.2101
1000$ 0.2046
3000$ 0.1947
9000$ 0.1903

Availability 2910
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2159
6000$ 0.2148
9000$ 0.211
12000$ 0.21
27000$ 0.2088
51000$ 0.2079
102000$ 0.2068


Availability 157472
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3462
10$ 0.2713
100$ 0.23
500$ 0.2101
1000$ 0.2046
3000$ 0.1947
9000$ 0.1903


Availability 2423
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.686
10$ 0.5292
50$ 0.441
56$ 0.343
153$ 0.3234


Availability 2561
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1561
Multiples : 1
QtyUnit Price
1561$ 0.3004
10000$ 0.2679
100000$ 0.2244


Availability 2910
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.254


Availability 2850
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1121
Multiples : 1
QtyUnit Price
1121$ 0.232
1122$ 0.2319
1122$ 0.2318
1123$ 0.2317
1123$ 0.2315


Availability 11640
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2172
9000$ 0.2151


Availability 32010
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2204
9000$ 0.213

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Termination Type
Voltage Vds
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th Max
Kind Of Package
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDC608PZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDC608PZ and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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Image Part-Description
Stock Image FDC6303N
Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Stock : 144000
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image FDC6304P
MOSFET SSOT-6 P-CH -25V
Stock : 75693
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image FDC6305N
mosfet 2 n channel (dual) 20v 2.7a 1.5v @ 250ua 80 m @ 2.7a,4.5v tsot-23-6 rohs
Stock : 15000
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image FDC6306P
MOSFET SSOT-6 P-CH -20V
Stock : 29
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image FDC6318P
Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Stock : 3000
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image FDC6320C
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Stock : 12750
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Stock Image FDC6321C
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Stock Image SSN1N45BTA
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Stock Image FDC6327C
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image FDC6333C
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC608PZ FDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET Features General Description 5.8 A, 20 V. R = 30 m V = 4.5 V DS(ON) GS R = 43 m V = 2.5 V DS(ON) GS This P-Channel 2.5V specified MOSFET is produced using ON Semiconductors advanced Low Gate Charge PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain High performance trench technology for extremely low gate charge for superior switching performance. low R DS(ON) These devices are well suited for battery power TM SuperSOT 6 package: small footprint (72% applications: load switching and power management, battery power circuits, and DC/DC conversions. smaller than standard SO8) low profile (1mm thick). S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS 12 I Drain Current Continuous (Note 1a) 5.8 A D Pulsed 20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 30 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .608Z FDC608PZ 7 8mm 3000 units Publication Order Number: 2006 Semiconductor Components Industries, LLC. FDC608PZ/D October-2017, Rev. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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